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| Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 6 mW (typ.) Wide directivity, matched for external optical systems : = 100 deg. Infrared light emission close to monochromatic light : P = 950 nm Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors o5.35 +0.2 -0.1 o4.2 +0.1 -0.2 3.00.3 12.7 min. 2.00.1 0.20.05 2-o0.450.05 0 1. 5 .1 +0 0.1 - 1. 0 0. 1 45 3 2 1 Absolute Maximum Ratings (Ta = 25C) 2.540.25 Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 160 100 2 3 -25 to +85 -30 to +100 Unit mW mA A V C C 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-power angle Symbol PO P VF IR Ct tr tf Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IFP = 100mA The angle in which radiant intencity is 50% min 3.5 typ 6 950 50 1.25 50 1 1 100 max Unit mW nm nm 1.6 10 V A pF s s deg. 1 LN52 Infrared Light Emitting Diodes IF -- Ta 120 10 2 IFP -- Duty cycle 120 Ta = 25C IF -- VF Ta = 25C 100 IF (mA) IFP (A) 100 Allowable forward current 80 IF (mA) Forward current 1 10 10 2 10 80 Pulse forward current 60 1 60 40 40 10 -1 20 20 0 - 25 0 20 40 60 80 100 10 -2 10 -1 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) IFP -- VF 10 4 120 PO -- IF Ta = 25C 10 3 PO -- IFP Ta = 25C (1) tw = 10s Duty Cycle = 0.1% (2) DC (1) 10 IFP (mA) PO PO 60 10 3 100 10 2 Relative radiant power Pulse forward current 10 2 Relative radiant power 80 10 1 (2) 40 1 tw = 10s Duty Cycle = 0.1% Ta = 25C 3 4 5 20 10 -1 10 -1 0 1 2 0 0 20 40 60 80 100 120 10 -2 1 10 10 2 10 3 10 4 Forward voltage VF (V) Forward current IF (mA) Pulse forward current IFP (mA) VF -- Ta 1.6 10 PO -- Ta IF = 100mA 1000 P -- Ta IF = 100mA P (nm) Peak emission wavelength 0 40 80 1 10 -1 - 40 VF (V) 1.2 Relative radiant power 50mA 10mA 1mA 0.8 PO IF = 100mA 980 960 Forward voltage 940 0.4 920 0 - 40 0 40 80 120 900 - 40 0 40 80 120 Ambient temperature Ta (C ) Ambient temperature Ta (C ) Ambient temperature Ta (C ) 2 Infrared Light Emitting Diodes LN52 Spectral characteristics 100 IF = 100mA Ta = 25C Directivity characteristics 0 100 80 60 40 10 20 30 40 10 2 Frequency characteristics Ta = 25C Relative radiant intensity(%) Relative radiant intensity (%) 80 50 60 70 80 90 10 60 20 Modulation output 1 40 10 -1 20 0 800 850 900 950 1000 1050 1100 10 -2 10 10 2 10 3 10 4 Wavelength (nm) Frequency f (kHz) 3 |
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